
@article{okumura_present_2006,
	title = {Present {Status} and {Future} {Prospect} of {Widegap} {Semiconductor} {High}-{Power} {Devices}},
	volume = {45},
	issn = {0021-4922, 1347-4065},
	doi = {10.1143/JJAP.45.7565},
	language = {en},
	number = {10A},
	urldate = {2022-09-27},
	journal = {Japanese Journal of Applied Physics},
	author = {Okumura, Hajime},
	month = oct,
	year = {2006},
	pages = {7565--7586},
	file = {Okumura - 2006 - Present Status and Future Prospect of Widegap Semi.pdf:/home/chn/Zotero/storage/T26XT9I6/Okumura - 2006 - Present Status and Future Prospect of Widegap Semi.pdf:application/pdf},
}

@article{casady_status_1996,
	title = {Status of {Silicon} {Carbide} ({SiC}) as a {Wide}-bandgap {Emiconductor} for {High}-temperature {Applications}: a {Review}},
	volume = {39},
	doi = {10.1016/0038-1101(96)00045-7},
	language = {en},
	number = {10},
	journal = {Solid-State Electronics},
	author = {Casady, J B and Johnson, R W},
	month = feb,
	year = {1996},
	pages = {1409--1422},
	file = {Casady 和 Johnson - STATUS OF SILICON CARBIDE (SIC) AS A WlDE-BANDGAP .pdf:/home/chn/Zotero/storage/9UE6AB28/Casady 和 Johnson - STATUS OF SILICON CARBIDE (SIC) AS A WlDE-BANDGAP .pdf:application/pdf},
}

@article{tsuchida_recent_2018,
	title = {Recent advances in {4H}-{SiC} epitaxy for high-voltage power devices},
	volume = {78},
	issn = {13698001},
	doi = {10.1016/j.mssp.2017.11.003},
	abstract = {This paper reports recent advances in high-quality 4H-SiC epitaxial growth. The modern 4H-SiC epitaxial reactors, techniques to improve growth rates and large-diameter uniformity and reduce defect densities are discussed. A single-wafer vertical-type epitaxial reactor is newly developed and employed to grow 150 mm-diameter 4H-SiC epilayers. Using the reactor, high-speed wafer rotation is conﬁrmed eﬀective, both for enhancing growth rates and improving thickness and doping uniformities. Current levels of reducing particle-induced defects, in-grown stacking faults and basal plane dislocations and controlling carrier lifetimes are also reviewed.},
	language = {en},
	urldate = {2022-10-06},
	journal = {Materials Science in Semiconductor Processing},
	author = {Tsuchida, Hidekazu and Kamata, Isaho and Miyazawa, Tetsuya and Ito, Masahiko and Zhang, Xuan and Nagano, Masahiro},
	month = may,
	year = {2018},
	pages = {2--12},
	file = {Tsuchida 等。 - 2018 - Recent advances in 4H-SiC epitaxy for high-voltage.pdf:/home/chn/Zotero/storage/S596D8SX/Tsuchida 等。 - 2018 - Recent advances in 4H-SiC epitaxy for high-voltage.pdf:application/pdf},
}

@article{sun_selection_2022,
	title = {Selection of growth monomers on the {4H}-{SiC} (0001) atomic step surfaces: from the first-principles calculations to homo-epitaxy verification},
	volume = {606},
	issn = {01694332},
	shorttitle = {Selection of growth monomers on the {4H}-{SiC} (0001) atomic step surfaces},
	url = {https://linkinghub.elsevier.com/retrieve/pii/S0169433222024771},
	doi = {10.1016/j.apsusc.2022.154949},
	abstract = {Silicon carbide (SiC) has gained increased interest due to industry demand, especially for the 4H-SiC. Never­ theless, the ‘structural mutation’ in the 4H-SiC epitaxy is in urgent need of investigation and proper solution as the epitaxial thickness/wafer size increases. In this study, growth monomers in the step-flow mode were firstly investigated by the first-principles calculations for their dynamic and kinetic behaviours from an atomic level. The stability (by the comprehensive analyses of total energies, chemical potentials, and formation enthalpies) and the location of adsorptions were studied to reveal the dynamics. Meanwhile, the potential barrier of Si-Si interaction and phonon spectra were determined to understand the kinetics. We found monomers could be selected by controlling chemical potentials to make ordering growth. Secondly, two methods were thus inferred to select monomers to adsorb on atomic step surfaces in an orderly fashion and were verified in a six-inch epitaxy. Thirdly, a protocol was designed to restrict the extension of basal plane dislocation (BPD) from sub­ strates, a reduction greater than five orders of magnitude was gained but without time compromise in the thickfilm epitaxy. This study provided new insights into growth on the 4H-SiC (0001) atomic step surfaces and a new way of 4H-SiC homo-epitaxy.},
	language = {en},
	urldate = {2022-10-06},
	journal = {Applied Surface Science},
	author = {Sun, Yongqiang and Kang, Wenyu and Chen, Haonan and Chen, Xinlu and Dong, Yue and Lin, Wei and Kang, Junyong},
	month = dec,
	year = {2022},
	pages = {154949},
	file = {Sun et al. - 2022 - Selection of growth monomers on the 4H-SiC (0001) .pdf:/home/chn/Zotero/storage/VTGL4G53/Sun et al. - 2022 - Selection of growth monomers on the 4H-SiC (0001) .pdf:application/pdf},
}

@article{harada_suppression_2022,
	title = {Suppression of stacking fault expansion in a {4H}-{SiC} epitaxial layer by proton irradiation},
	volume = {12},
	issn = {2045-2322},
	doi = {10.1038/s41598-022-17060-y},
	abstract = {Abstract
            
              SiC bipolar degradation, which is caused by stacking fault expansion from basal plane dislocations in a SiC epitaxial layer or near the interface between the epitaxial layer and the substrate, is one of the critical problems inhibiting widespread usage of high-voltage SiC bipolar devices. In the present study, we investigated the stacking fault expansion behavior under UV illumination in a 4H-SiC epitaxial layer subjected to proton irradiation. X-ray topography observations revealed that proton irradiation suppressed stacking fault expansion. Excess carrier lifetime measurements showed that stacking fault expansion was suppressed in 4H-SiC epitaxial layers with proton irradiation at a fluence of 1 × 10
              11
               cm
              −2
              without evident reduction of the excess carrier lifetime. Furthermore, stacking fault expansion was also suppressed even after high-temperature annealing to recover the excess carrier lifetime. These results implied that passivation of dislocation cores by protons hinders recombination-enhanced dislocation glide motion under UV illumination.},
	language = {en},
	number = {1},
	urldate = {2022-10-06},
	journal = {Scientific Reports},
	author = {Harada, Shunta and Mii, Toshiki and Sakane, Hitoshi and Kato, Masashi},
	month = aug,
	year = {2022},
	pages = {13542},
	file = {Harada et al. - 2022 - Suppression of stacking fault expansion in a 4H-Si.pdf:/home/chn/Zotero/storage/VJ7H4G59/Harada et al. - 2022 - Suppression of stacking fault expansion in a 4H-Si.pdf:application/pdf},
}

@article{harada_observation_2022,
	title = {Observation of in-plane shear stress fields in off-axis {SiC} wafers by birefringence imaging},
	volume = {55},
	issn = {1600-5767},
	url = {https://scripts.iucr.org/cgi-bin/paper?S1600576722006483},
	doi = {10.1107/S1600576722006483},
	abstract = {For the nondestructive characterization of SiC wafers for power device application, birefringence imaging is one of the promising methods. In the present study, it is demonstrated that birefringence image contrast variation in off-axis SiC wafers corresponds to the in-plane shear stress under conditions slightly deviating from crossed Nicols according to both theoretical consideration and experimental observation. The current results indicate that the characterization of defects in SiC wafers is possible to achieve by birefringence imaging.},
	language = {en},
	number = {4},
	urldate = {2023-06-14},
	journal = {Journal of Applied Crystallography},
	author = {Harada, Shunta and Murayama, Kenta},
	month = aug,
	year = {2022},
	pages = {1029--1032},
	file = {Harada and Murayama - 2022 - Observation of in-plane shear stress fields in off.pdf:/home/chn/Zotero/storage/X6LVEJRU/Harada and Murayama - 2022 - Observation of in-plane shear stress fields in off.pdf:application/pdf},
}
