= Results and Discussion

我们先讨论无缺陷的情况，再讨论有缺陷的情况。
无缺陷的情况可以解释绝大多数拉曼信号，其它情况从拉曼中的小峰和峰的改变中看出。

Phonon modes in defect-free 4H-SiC were first analyzed,
  which account for the majority of the observed Raman signals.
Subsequently, the effects of defects and charge carriers were addressed,
  which manifested as additional minor peaks and modifications to the primary peaks in the Raman spectra.

#include "perfect/default.typ"
#include "defect/default.typ"
