== 4H-SiC wafer details

外延片的厚度、掺杂浓度、生长 C/Si 比，斜切角度。

5 个 6 寸的 p 型外延片被使用，我们将它们称为 W#sub[i]。
使用的衬底都是 n 型，前四个外延片的厚度为 1 微米，第五个外延片的厚度为 2 微米。
外延层的 Al 掺杂浓度分别为 0.1 3.8 5.1 6.4 10 E18 cm#super[-3]，使用 SIMS 测试。
生长时 Si/C 比分别为 0.7 1.2 1.6 2.4 2.0。、
所有外延片都有 4 度斜切。

Five 6-inch p-type epitaxial wafers (W#sub[1]–W#sub[5]) were fabricated on n-type substrates
  using the step-flow growth method with a 4° offcut angle.
The Al doping concentrations, determined by SIMS,
  were 0.1, 3.8, 5.1, 6.4, and 10 #sym.times 10 cm#super[-3] for W#sub[1]–W#sub[5], respectively.
The W#sub[1]–W#sub[4] had an epitaxial layer thickness of 1 μm, while W#sub[5] had a thickness of 2 μm.
The Si/C ratios during growth were 0.7, 1.2, 1.6, 2.4, and 2.0 for the five wafers, respectively.

