= Results and Discussion

我们先讨论无缺陷的情况，再讨论有缺陷的情况。
无缺陷的情况可以解释绝大多数拉曼信号，其它情况从拉曼中的小峰和峰的改变中看出。

Phonon modes in defect-free 4H-SiC were first analyzed,
  which account for the majority of the observed Raman signals.
Subsequently, we address the effects of defects,
  which manifest as additional minor peaks
    and modifications to the Raman features associated with the defect-free 4H-SiC phonon modes.

#include "perfect/default.typ"
#include "defect/default.typ"
